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SSTA56 / MMSTA56 / MPSA56 Transistors PNP General Purpose Transistor SSTA56 / MMSTA56 / MPSA56 !Features 1) BVCEO < -40V (IC = -1mA) 2) Complements the SSTA06 / MMSTA06 / MPSA06. !External dimensions (Units : mm) SSTA56 2.90.2 1.90.2 0.95 0.95 (1) (2) 0.95 +0.2 -0.1 0.450.1 1.3 +0.2 -0.1 2.40.2 !Package, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) SSTA56 SST3 R2G T116 3000 MMSTA56 SMT3 R2G T146 3000 MPSA56 TO-92 T93 3000 (3) 0~0.1 0.2Min. 0.4 +0.1 -0.05 +0.1 0.15 -0.06 ROHM : SST3 All terminals have same dimensions (1) Emitter (2) Base (3) Collector MMSTA56 2.90.2 1.90.2 0.95 0.95 1.1 +0.2 -0.1 0.80.1 1.6 +0.2 -0.1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power SSTA56, MMSTA56 dissipation MPSA56 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -80 -80 -4 -0.5 0.2 0.625 150 -55~+150 Unit V V V A W C C 4.80.2 (3) 2.80.2 !Absolute maximum ratings (Ta = 25C) (1) (2) 0~0.1 ROHM : SMT3 EIAJ : SC-59 +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions 0.3~0.6 2.3 (1) Emitter (2) Base (3) Collector MPSA56 4.80.2 3.70.2 (12.7Min.) (1) (2) 5 (3) 2.5 +0.3 -0.1 0.45 0.1 2.5Min. 0.50.1 ROHM : TO-92 EIAJ : SC-43 (1) Emitter (2) Base (3) Collector !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Symbol BVCBO BVCEO ICBO ICEO VCE(sat) VBE(on) hFE fT Min. -4 -80 100 100 50 Typ. Max. -0.1 -1 -0.25 -1.2 Unit V V A V V MHz IC = -100A IC = -1mA VCB = -80V VCE = -60V IC/IB = -100mA/-10mA VCE/IB = -1V/-100mA VCE = -1V , IC = -10mA VCE = -1V , IC = -100mA VCE = -1V , IE = 100mA , f = 100MHz Conditions SSTA56 / MMSTA56 / MPSA56 Transistors !Electrical characteristic curves 500 Ta=25C IC-COLLECTOR CURRENT (mA) 1000 4.5mA 4.0mA 3.5mA 3.0mA 5.0m A Ta=25C 1000 VCE=3V Ta=125C hFE-DC CURRENT GAIN 400 A 2.5m 2.0mA VCC=5V 3V hFE-DC CURRENT GAIN 25C -40C 300 1.5mA 100 1V 100 200 1.0mA 0.5mA 100 IB=0mA 0 0 2.0 0.4 0.8 1.2 1.6 VCE-COLLECTOR-EMITTER VOLTAGE (V) 10 1 10 100 1000 IC-COLLECTOR CURRENT (mA) 10 1 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.1 Grounded emitter output characteristics Fig.2 DC current gain vs. collector current ( ) Fig.3 DC current gain vs. collector current ( ) VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V) VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 VBE(ON)BASE EMITTER VOLTAGE (V) IC / IB=10 0.3 Ta=25C IC / IB=10 1.8 VCE=3V 1.6 1.4 1.2 1.0 Ta=-40C 0.8 0.6 0.4 0.2 0 1 10 100 1000 IC-COLLECTOR CURRENT (mA) 25C 125C Ta=125C 0.2 25C 0.1 -40C 0 1 10 100 1000 IC-COLLECTOR CURRENT (mA) 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.4 Collector emitter saturation voltage vs. collector current Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Grounded emitter propagation characteristics 100 Cib 10 5 0.5 Cob CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 500 1000 Ta=25C f=1MHz Ta=25C VCE=10V CAPACITANCE (pF) 100 10 1 10 REVERSE BIAS VOLTAGE (V) 50 1 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.7 Input/output capecitance vs. voltage Fig.8 Gain bandwidth product vs. collector current |
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