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 SSTA56 / MMSTA56 / MPSA56
Transistors
PNP General Purpose Transistor
SSTA56 / MMSTA56 / MPSA56
!Features 1) BVCEO < -40V (IC = -1mA) 2) Complements the SSTA06 / MMSTA06 / MPSA06. !External dimensions (Units : mm)
SSTA56
2.90.2 1.90.2 0.95 0.95 (1) (2) 0.95 +0.2 -0.1 0.450.1
1.3 +0.2 -0.1
2.40.2
!Package, marking and packaging specifications
Part No. Packaging type Marking Code Basic ordering unit (pieces) SSTA56 SST3 R2G T116 3000 MMSTA56 SMT3 R2G T146 3000 MPSA56 TO-92 T93 3000
(3)
0~0.1 0.2Min.
0.4 +0.1 -0.05
+0.1 0.15 -0.06
ROHM : SST3
All terminals have same dimensions
(1) Emitter (2) Base (3) Collector
MMSTA56
2.90.2 1.90.2 0.95 0.95
1.1 +0.2 -0.1 0.80.1
1.6 +0.2 -0.1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power SSTA56, MMSTA56 dissipation MPSA56 Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits -80 -80 -4 -0.5 0.2 0.625 150 -55~+150
Unit V V V A W C C
4.80.2
(3)
2.80.2
!Absolute maximum ratings (Ta = 25C)
(1)
(2) 0~0.1
ROHM : SMT3 EIAJ : SC-59
+0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions
0.3~0.6
2.3
(1) Emitter (2) Base (3) Collector
MPSA56
4.80.2
3.70.2
(12.7Min.)
(1)
(2) 5
(3)
2.5 +0.3 -0.1 0.45 0.1
2.5Min.
0.50.1
ROHM : TO-92 EIAJ : SC-43
(1) Emitter (2) Base (3) Collector
!Electrical characteristics (Ta = 25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Symbol BVCBO BVCEO ICBO ICEO VCE(sat) VBE(on) hFE fT Min. -4 -80 100 100 50 Typ. Max. -0.1 -1 -0.25 -1.2 Unit V V A V V MHz IC = -100A IC = -1mA VCB = -80V VCE = -60V IC/IB = -100mA/-10mA VCE/IB = -1V/-100mA VCE = -1V , IC = -10mA VCE = -1V , IC = -100mA VCE = -1V , IE = 100mA , f = 100MHz Conditions
SSTA56 / MMSTA56 / MPSA56
Transistors
!Electrical characteristic curves
500 Ta=25C
IC-COLLECTOR CURRENT (mA)
1000
4.5mA 4.0mA 3.5mA 3.0mA
5.0m A
Ta=25C
1000
VCE=3V Ta=125C
hFE-DC CURRENT GAIN
400
A 2.5m 2.0mA
VCC=5V 3V
hFE-DC CURRENT GAIN
25C -40C
300
1.5mA
100 1V
100
200
1.0mA
0.5mA 100 IB=0mA 0 0 2.0 0.4 0.8 1.2 1.6 VCE-COLLECTOR-EMITTER VOLTAGE (V)
10
1
10 100 1000 IC-COLLECTOR CURRENT (mA)
10
1
10 100 1000 IC-COLLECTOR CURRENT (mA)
Fig.1 Grounded emitter output characteristics
Fig.2 DC current gain vs. collector current ( )
Fig.3 DC current gain vs. collector current ( )
VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V)
VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1
VBE(ON)BASE EMITTER VOLTAGE (V)
IC / IB=10 0.3
Ta=25C IC / IB=10
1.8
VCE=3V
1.6 1.4 1.2 1.0 Ta=-40C 0.8 0.6 0.4 0.2 0 1 10 100 1000 IC-COLLECTOR CURRENT (mA) 25C 125C
Ta=125C 0.2 25C
0.1
-40C
0
1
10 100 1000 IC-COLLECTOR CURRENT (mA)
10 100 1000 IC-COLLECTOR CURRENT (mA)
Fig.4 Collector emitter saturation voltage vs. collector current
Fig.5 Base-emitter saturation voltage vs. collector current
Fig.6 Grounded emitter propagation characteristics
100
Cib
10 5 0.5
Cob
CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
500
1000
Ta=25C f=1MHz
Ta=25C VCE=10V
CAPACITANCE (pF)
100
10
1 10 REVERSE BIAS VOLTAGE (V)
50
1
10 100 1000 IC-COLLECTOR CURRENT (mA)
Fig.7 Input/output capecitance vs. voltage
Fig.8 Gain bandwidth product vs. collector current


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